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Monday, August 3, 2020 | History

3 edition of A V-grooved AlGaAs/GaAs passivated PN junction found in the catalog.

A V-grooved AlGaAs/GaAs passivated PN junction

A V-grooved AlGaAs/GaAs passivated PN junction

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Published by National Aeronautics and Space Administration, For sale by the National Technical Information Service in [Washington, DC], [Springfield, Va .
Written in English

    Subjects:
  • Solar cells.

  • Edition Notes

    Other titlesV grooved AlGaAs/GaAs passivated PN junction.
    StatementSheila G. Bailey, Rosa P. Leon, and Anne Arrison.
    SeriesNASA technical memorandum -- 100138.
    ContributionsLeon, Rosa P., Arrison, Anne., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL15289293M

    Nanometer-Resolved Photocurrent and Local Minority Carrier Transport in GaAs p-n Junctions. D. Optical Properties and Processes. Optical Anisotropy Above the Fundamental Gap in Ordered Ga In P. Strain Effects in GaAs Epilayers Grown on In- and Si-Doped GaAs Substrates. Self-Induced Birefringence of Infrared Light in n-Ge. Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, lowcost tandem photovoltaics. Here, we present single-junction GaAs solar cells grown monolithically on on-axis Si () substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers, along.

    An HBT device having heterostructure ballasting emitter is disclosed. The heterostructure ballasting emitter includes an n-type emitter setback layer on a base layer and a wide-gap ballasting emitter layer on the setback layer. The heterostructure ballasting emitter is made so that the band gap of the emitter setback layer is equal to or larger than that of the base layer and the band gap of. Epitaxial layers grown by molecular beam epitaxy on both silicon and gallium arsenide substrates are exposed by cleaving and studied by scanning tunneling microscopy (STM) at ambient pressure. The cleaved surfaces are prepared for imaging by wet chemical treatments. GaAs/AlGaAs and Si/SiGe multilayer structures are imaged with —1 nm resolution. The contrast in the STM images is believed to.

      Characterization of AlGaAs/GaAs vertical-cavity surface-emitting laser diode grown on Si substrate by MOCVD Takashi Egawa et al Applied Surface Science Crossref. GaAs side-by-side direct wafer bonding and formation of lateral pn junction T. Takamori et al Applied Surface Science Crossref. Results on radiation hardness of AlGaAs/GaAs solar cells for 5, 10, 15, and 52 MeV proton with fluences up to 5×10 12 p/cm 2 are presented. The AlGaAs/GaAs solar cells are superior to Si solar cells for radiation damage of high energy proton capable of penetrating a coverglass.


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A V-grooved AlGaAs/GaAs passivated PN junction Download PDF EPUB FB2

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared.

Get this from a library. A V-grooved AlGaAs/GaAs passivated PN junction. [Sheila G Bailey; Rosa P Leon; Anne Arrison; United States.

National Aeronautics and Space Administration.]. A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration.

An AlGaAs epilayer has been deposited on a p-type GaAs epilayer. A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration.

An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using : Sheila G. Bailey, Rosa P. Leon, Anne Arrison.

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration.

An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration.

An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration.

An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A V-grooved AlGaAs/GaAs Passivated-pn Junction,I' Nineteenth IEEE Photovol tai c Speci a1 i sts Conference. Jan ; ; S G Bailey; R P Leon; A Arrison.

Unpassivated axial GaAs nanowire pn junctions are known to exhibit reverse current densities in the range of 10 μA cm −2 at −1 V due to the large recombination velocity at the surface. 11 Passivation with a wide bandgap shell, for example, AlGaAs or InGaP, decreases the trap density at the surface, leading to an increased minority carrier.

We report a systematic study of carrier dynamics in AlxGa1–xAs-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (Ldiff) increases from 30 to nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub ps to ns.

A fold enhancement in the continuous-wave PL intensity is observed on. In AlGaAs/GaAs HBTs, the instability of the surface states of the extrinsic base, which is revealed by mesa-etching and passivated by Si 3 N 4, affects this study the reverse constant current stress in an avalanche regime is applied across the emitter–base junction in order to test the stability of the heterojunction and the surface state of the extrinsic base.

() n-GaAs(Te) wafers with the thickness of μ m and doping impurity concentrations N d: ( – 5) × 10 16, ( – ) × 10 17 and ( – 4) × 10 18 cm − 3 were used as substrates for p + –n junction fabrication.

The factory polished surfaces of wafers were slightly etched in polishing etchant (flat structures) or anisotropically etched to prepare surface microreliefs of.

A GaAs pn junction passivated by an AI,Ga~ ~As window layer is placed over an n+-GaAs substrate. Values of SE = 1 10" cm s-' (window/emitter interface), Sv = 1 cm s-~ (front window) and SB = 1 cm s ' (base back surface) were assigned to the interface recombination velocities according to the state-of- the-art values.

2. Experimental A1GaAs and GaAs single junction cells were grown on n-type GaAs wafers by the MBE technique.

The AlGaAs cells had an AlAs mole fraction of employing a state-of-the-art structure [4]. The base (3 ~m) was a p-type with a Be-doping level of 3 l cm 3 and the emitter ( ~m) was an n-type with a Si doping level of 2 10~s cm we have reported a microgrooved GaAs pn junction and AlGaAs passivated pn junction (Ref.

5, 6). h Previously *National Research Council - NASA Research Associate. FRONT CONTACT A A A METALLIZATION / \ / \ \ 1 \ t A - Figure 1. Schematic of V-grooved gallium arsenide solar cell (not to scale). V-GROOVE FABRICATION.

A similar behaviour has been found previously for GaAs etchback-regrowth solar cells grown in a vertical substrate position [7]. Selective removal of the GaAs substrate Because of the Al-gradient within the AlxGal_xAs layer, the Al-content at the GaAs- A1GaAs interface is always higher compared to the value at the pn-junction.

Axial GaAs nanowire p–n diodes, possibly one of the core elements of future nanowire solar cells and light emitters, were grown via the Au-assisted vapor–liquid–solid mode, contacted by electron beam lithography, and investigated using electron beam induced current measurements.

The minority carrier diffusion lengths and dynamics of both, electrons and holes, were determined directly at. Such high values for the saturation current densities reveal imperfections in the p-n junction itself and the absence of surface passivation.

Aberg et al showed a fold decrease in after applying AlGaAs passivation on GaAs NWs [ 3 ]. A V-grooved AlGaAs/GaAs passivated PN junction. Anne Arrison; A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit.

Growth on GaAs," presented at the State of the Art Program on Compound Semiconductors-IX, Electrochemical Society Fall Meeting, Chicago, IL, Oct. S.G. Bailey, R.P. Leon, and A. Arrison, "A V-grooved AlGaAs/GaAs Passivated- pn Junction,I' Nineteenth IEEE Photovol tai c Speci a1 i sts Conference, IEEE,pp.

AlGaAs / (p-n) GaAs heterostructure photoelectric param- Redox couple D + and A -is equivalent to the p/n junction of and Si/SiGe cells, with optimized doping concentrations but without.In order to produce GaAs nanowires with a pn-junction, we used an Aerotaxy growth system with Au nanoparticles as catalytic seeds in a reactor with different dopants in consecutive growth chambers.

We first describe the setup and operating principles of the Aerotaxy system employed and then present an evaluation of the electrical and optical.

We report the use of Te as an n-type dopant in GaAs core−shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor−liquid−solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating.